Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti-radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short-wave light-emitting devices and high temperature, high frequency and high power electronic devices gan是直接帶隙半導(dǎo)體材料,以其禁帶寬度大、電子飽和漂移速度大、熔點(diǎn)高、熱導(dǎo)率高、抗輻射能力強(qiáng)和化學(xué)穩(wěn)定性好等優(yōu)點(diǎn)成為制造短波長(zhǎng)光發(fā)射器件及高溫、高頻、大功率電子器件的理想材料。